|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||2018 Symposium on Functional Nanomaterials: Discovery and Integration of Nanomaterials
||Conduction Path in a 2D/2D Face Overlapped Heterojunction
||Hirokjyoti Kalita, Tania Roy
|On-Site Speaker (Planned)
Van der Waals heterojunctions with 2D materials are being studied actively owing to their versatile electronic and optoelectronic properties, such as for rectification, tunneling, light generation, etc. While many reports exist on the electronic and optoelectronic behavior of a 2D/2D heterojunction, the path of current conduction is still not established. Does the conduction happen mostly at the edge, or does it uniformly flow across the overlapping area? Answering this question will help us scale the heterojunction devices optimally to obtain the maximum current through them. We study the conduction mechanism in MoS2/WSe2 (staggered gap) and SnSe2/WSe2 (broken gap) heterojunction devices by means of conductive atomic force microscopy.
||Planned: Supplemental Proceedings volume