|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Mechanical Behavior at the Nanoscale IV
||Stress Relaxation Mechanisms in Thin Films
||Marisol Koslowski, Xiaorong Cai
|On-Site Speaker (Planned)
The relaxation of microstructure-induced stresses is linked to a wide range of failure mechanisms in thin metal films. Whisker and hillock formation are known responses of thin metal films to residual stresses but others include, grain boundary sliding, cracking, delamination and and grain growth. The relative contributions of these operations to stress relaxation frequently switch as stress distributions, temperature and microstructures evolve.
Whisker growth is accompanied by grain boundary sliding, plasticity, grain growth, recrystallization, and creep. Here we present a plasticity model and a dynamic recrystallization model to predict the formation of shallow grains that may act as a nucleation site for whisker nucleation and growth. The model is implemented in a finite element code and includes crystal plasticity and coupled phase field models to simulate grain growth, recrystallization and mass transport. The simulations show the formation of shallow grains that from to minimize the local strain energy.
||Planned: Supplemental Proceedings volume