|About this Abstract
||Materials Science & Technology 2011
||MS&T'11 Poster Session
||198 Influence of Growth Condition on Ga and N Co-Doped Zinc Oxide Films and Its Effect on PEC Response for Solar Driven Hydrogen Production
||Sudhakar Shet, Yanfa Yan, Nuggehalli Ravindra, John Turner, Mowafak Al-Jassim
|On-Site Speaker (Planned)
The co-doped ZnO:(Ga:N) thin films were deposited by co-sputtering in different O2 gas flow ratio in mixed N2 and O2 ambient at room temperature followed by annealing. ZnO:(Ga:N) films exhibited enhanced crystallinity comparing to ZnO and ZnO:N film grown at the same conditions. We found that the O2 gas flow ratio in mixed N2 and O2 gas ambient is very sensitive factor for depositing co-doped ZnO:(Ga:N) without phase separation. The ZnO:Ga,N film without the phase separation exhibited much better crystallinity, the reduced bandgap, and proper depletion width, resulting in the significantly improved PEC property. On the contrary, the PEC responses of ZnO:(Ga:N) films with phase segregation of Zn3N2 were not too high, compared to the ZnO:(Ga:N) films without the phase separation, due to the photo-inactive Zn3N2 phase.