|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||2018 Symposium on Functional Nanomaterials: Discovery and Integration of Nanomaterials
||Oxidation of Silicon for Application on Atomic Layer Deposition
||Su Min Hwang, Xin Meng, Aotonio T. Lucero, Harrison S. Kim, Jiyoung Kim
|On-Site Speaker (Planned)
||Su Min Hwang
Over the past few decades, silicon dioxide (SiO<SUB>
2</SUB>) has been conventionally used as a gate dielectric material on MOSFET and TFT devices. As these devices have been scaled down for integration, development of deposition technique with good step coverage and uniformity is required. Among the various deposition techniques (e.g. sputtering, LPCVD, PECVD), atomic layer deposition (ALD) of SiO<SUB>
2</SUB> films has drawn great attention due to the precise control of film thickness, excellent step coverage, uniformity and film quality. ALD of SiO<SUB>
2</SUB> films have been reported, but the fundamental study of the effect of oxidant choice (H<SUB>
2</SUB> and O<SUB>
3</SUB>) has been scarce.
In this study, oxidation of silicon substrates using various oxidants was performed for ALD application. The thickness and uniformity of SiO<SUB>
2</SUB> films were measured by ellipsometry and the film density by X-ray reflectometry. Film composition was determined by ultraviolet photoelectron spectroscopy.
||Planned: Supplemental Proceedings volume