|About this Abstract
||2010 Electronic Materials Conference
||TMS 2010 Electronic Materials Conference
||R6, High-Quality p-Type ZnO Layers Grown by Co-Doping of N and Te
||Seunghwan Park, T. Minegishi, J.S. Park, I.H. Im, D.C. Oh, T. Taishi, I. Yonenaga, M.N. Jung, J.H. Chang, Takafumi Yao
|On-Site Speaker (Planned)
We will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by (N+Te) codoping. As-grown ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×1016 cm-3, while ZnO:N shows n-type conduction. The photoluminescence of ZnO:N shows broad bound exciton emission lines, while ZnO:[N+Te] layers show dominant AoX emission line at 3.359 eV, with a linewidth as narrow as 1.2 meV. Its X-ray linewidth shows narrower line width of 30 arcsec. Detailed investigation of PL properties of (N+Te) codoped ZnO layers suggest that the binding energy of N acceptors lies in a range of 121~157 meV. We note that as-grown (N+Te)-codoped ZnO layers heteroepitaxially grown on sapphire substrates showed n-type conduction, while they were converted into p-type conduction after annealing.